Transport of excess charge carriers in an inhomogeneous semiconductor in the presence of temperature gradient

• Autorzy: Sikorski S. , Piotrowski T.
• Języki publikacji: EN

Abstrakty

EN

Photovoltaic effects are considered in a semiconductor where doping, energy gap and temperature are position-dependent. The formula derived for the total current density contains four effects: bulk photovoltaic effect, photovoltaic effect resulting from position-dependent mobilities, thermo-photovoltaic effect arising from combined photoconductivity and thermo-electric effects, seebeck thermo-electric effect. Numerical results shown in the diagrams present relative values of these effects calculated for SiGe semiconductor material.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 4
• Strony: 494--505
• Opis fizyczny: Bibliogr. 11 poz.

Twórcy

autor

Sikorski S.

autor

Piotrowski T.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland