X-ray diffracting investigation of strain distribution in silicon implanted by phosphorus

• Autorzy: Świątek Z. , Bonarski J. , Ciach R. , Fodchuk I. M. , Raransky M. D. , Gimchinsky O. G.
• Konferencja: The E-MRS European Conference on Photovoltaics ; ( 25.10-27.10.1999)
• Języki publikacji: EN

Abstrakty

EN

Research of structural changes in subsurface layers of Si single crystals during formation of amorphous layers hidden under the surface are carried out. It is established that phosphorus ion (with 180 keV energy and a doze of the order of 10¹⁵ ion/cm²) implantation and subsequent short-term temperature annealing at T = 500°C are caused great structural changes in subsufrace areas. The great strains in direction perpendicular to interface are characteristic of structures formed in this way.

Słowa kluczowe

EN

X-ray diffracting; subsurface layers; Si single crystals

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2000
• Tom: Vol. 8, No. 4
• Strony: 421--425
• Opis fizyczny: Bibliogr. 11 poz.

Twórcy

autor

Świątek Z.

autor

Bonarski J.

autor

Ciach R.

autor

Fodchuk I. M.

autor

Raransky M. D.

autor

Gimchinsky O. G.

• Institute of Melallurgy and Materials Science, Polish Academy of Sciences, 25 Reymonta Str., 30-059 Cracow, Poland,