Development of gettering processes for the preparation of the solar silicon material

• Autorzy: Efremov A. A. , Klyui N. I. , Litovchenko V. G. , Popov V. G. , Romanyuk A. B. , Romanyuk B. N.
• Konferencja: The E-MRS European Conference on Photovoltaics ; ( 25.10-27.10.1999)
• Języki publikacji: EN

Abstrakty

EN

A number of gettering treatments of Cz-Si wafers have been investigated. The characteristic parameters of the wafers have been measured. Among the procedures used, the gettering treatment, which included deposition of Ge film, followed by ion beam mixing and thermal annealing was preferred. This treatment allows to increase the diffusion length (Ld) of non-equilibrium carriers from 25-30 µm to 100-300 µm. The subsequent treatments did not lead to deterioration of Ld as it took place for the wafers without gettering treatments.

Słowa kluczowe

EN

gettering; solar cell; ion implantation; silicon; diamond-like film

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2000
• Tom: Vol. 8, No. 4
• Strony: 410--413
• Opis fizyczny: Bibliogr. 9 poz.

Twórcy

autor

Efremov A. A.

autor

Klyui N. I.

autor

Litovchenko V. G.

autor

Popov V. G.

autor

Romanyuk A. B.

autor

Romanyuk B. N.

• Institute of Semiconductor Physics, National Academy of Sciences, 45 Prospect Nauki, 252028 Kiev, Ukraine,