Formation and relaxation of metastable defects in amorphous silicon

• Autorzy: Pietruszko S. M. , Kostana M.
• Konferencja: The E-MRS European Conference on Photovoltaics ; ( 25.10-27.10.1999)
• Języki publikacji: EN

Abstrakty

EN

We studied relaxation of defects formed during fast quenching in low pressure chemical vapour deposition (LPCVD) amorphous silicon with different hydrogen concentrations (from 0.05 at.% to 15 at.%) doped with boron or phosphorous (2 at.%). Results of measurement of dark conductivity after quenching and slow cooling as well as measurement of the isothermal relaxation of dark conductivity after quenching in different temperatures are presented. We found relaxation time higher in P-doped than in B-doped films in the same annealing temperature. Activation energy of relaxation time was independent on hydrogen concentration and was higher for B-doped samples.

Słowa kluczowe

EN

amorphous silicon; metastability; relaxation; hydrogen

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2000
• Tom: Vol. 8, No. 4
• Strony: 385--387
• Opis fizyczny: Bibliogr. 5 poz.

Twórcy

autor

Pietruszko S. M.

autor

Kostana M.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa Str., Warsaw, Poland,