Tytuł artykułu
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Warianty tytułu
Konferencja
The E-MRS European Conference on Photovoltaics ; ( 25.10-27.10.1999)
Języki publikacji
Abstrakty
We studied relaxation of defects formed during fast quenching in low pressure chemical vapour deposition (LPCVD) amorphous silicon with different hydrogen concentrations (from 0.05 at.% to 15 at.%) doped with boron or phosphorous (2 at.%). Results of measurement of dark conductivity after quenching and slow cooling as well as measurement of the isothermal relaxation of dark conductivity after quenching in different temperatures are presented. We found relaxation time higher in P-doped than in B-doped films in the same annealing temperature. Activation energy of relaxation time was independent on hydrogen concentration and was higher for B-doped samples.
Słowa kluczowe
Wydawca
Czasopismo
Rocznik
Tom
Strony
385--387
Opis fizyczny
Bibliogr. 5 poz.
Twórcy
autor
autor
- Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa Str., Warsaw, Poland, pietruszko@imio.pw.edu.pl
Bibliografia
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA1-0001-1021