Crystal growth and characterisation of In-rich phases in Cu-In-Ga-Se system

• Autorzy: Filipowicz J. I. , Bacewicz R. , Wolska A.
• Konferencja: The E-MRS European Conference on Photovoltaics ; ( 25.10-27.10.1999)
• Języki publikacji: EN

Abstrakty

EN

Technological parameters of crystal growth using Bridgman-Stockbarger method for some materials of Cu-In-Se and Cu-In-Ga-Se systems are presented. Single crystals as large as 1 cm³ have been grown. The composition variation along crystal ingots was determined by the microprobe analysis. A strong segregation effect is observed. Crystals with composition close to the compounds with nominal compositions Cu₂In₄Se₇, CuIn₃Se₅, CuIn₅Se₈, CuGa₃Se₅ and Cu(In₀.₈Ga₀.₂)₃Se₅ were identified. Photolumiscence spectra of the crystals from the Cu-In-Se system were measured and analysed in terms of quasi-donor-acceptor transitions.

Słowa kluczowe

EN

crystal growth; ternary chalcogenides; multinary compounds; photoluminescence

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2000
• Tom: Vol. 8, No. 4
• Strony: 372--374
• Opis fizyczny: Bibliogr. 10 poz.

Twórcy

autor

Filipowicz J. I.

autor

Bacewicz R.

autor

Wolska A.

• Faculty of Physics, Warsaw University of Technology, 75 Koszykowa Str., 00-662 Warsaw, Poland,