Tytuł artykułu
Autorzy
Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Konferencja
The E-MRS European Conference on Photovoltaics ; ( 25.10-27.10.1999)
Języki publikacji
Abstrakty
Technological parameters of crystal growth using Bridgman-Stockbarger method for some materials of Cu-In-Se and Cu-In-Ga-Se systems are presented. Single crystals as large as 1 cm³ have been grown. The composition variation along crystal ingots was determined by the microprobe analysis. A strong segregation effect is observed. Crystals with composition close to the compounds with nominal compositions Cu₂In₄Se₇, CuIn₃Se₅, CuIn₅Se₈, CuGa₃Se₅ and Cu(In₀.₈Ga₀.₂)₃Se₅ were identified. Photolumiscence spectra of the crystals from the Cu-In-Se system were measured and analysed in terms of quasi-donor-acceptor transitions.
Słowa kluczowe
Wydawca
Czasopismo
Rocznik
Tom
Strony
372--374
Opis fizyczny
Bibliogr. 10 poz.
Twórcy
autor
autor
autor
- Faculty of Physics, Warsaw University of Technology, 75 Koszykowa Str., 00-662 Warsaw, Poland, jfil@mech.pw.edu.pl
Bibliografia
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA1-0001-1017