Reverse-bias DLTS for investigation of the interface region in thin film solar cells

• Autorzy: Igalson M. , Zabierowski P. , Romeo A. , Stolt L.
• Konferencja: The E-MRS European Conference on Photovoltaics ; ( 25.10-27.10.1999)
• Języki publikacji: EN

Abstrakty

EN

The interface states in TCO/Cds/CdTe and ZnO/CdS/Cu(In,Ga)Se₂ photovoltaic devices has been studied by use of reverse-bias transient capacitance spectroscopy. Laplace transform analysis has been used in order to enhance a spectral resolution of the technique. It is shown that the method yields useful information on the electronic characteristics of the heterointerface in the thin film solar cells. The conclusion include a degree of inversion of the heterointerface and a contribution of tunneling in the carrier transport. The influence of these factors on photovoltaic performance of the devices under study is discussed.

Słowa kluczowe

EN

DLTS; interface; solar cell; CdTe; Cu(In,Ga)Se2

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2000
• Tom: Vol. 8, No. 4
• Strony: 346--349
• Opis fizyczny: Bibliogr. 16 poz.

Twórcy

autor

Igalson M.

autor

Zabierowski P.

autor

Romeo A.

autor

Stolt L.

• Faculty of Physics, Warsaw University of Technology, 75 Koszykowa Str., 00-660 Warszawa, Poland,