Laser scanning of amorphous silicon photovoltaic modules with different bias conditions

• Autorzy: Roschier S. , Agostinelli G. , Dunlop E. D.
• Konferencja: The E-MRS European Conference on Photovoltaics ; ( 25.10-27.10.1999)
• Języki publikacji: EN

Abstrakty

EN

A single junction amorphous silicon photovoltaic module has been examined using a laser scanning system under different bias conditions. Laser scanning can be used as a tool to investigate non-dstructively cell-to-cell performance and reveal possible material defects undetectable by other methods. In this study the resulting photocurrent maps of the module, generated by the laser scanning system, were very uniform when low or no bias was applied. When high light bias or high forward bias conditions were applied two cells revealed a much higher signal than the other cells in the module. This elevated photocurrent signal has been interpreted as resulting form internal shunting of the cell. It is concluded that laser scanning a thin film amorphous silicon photovoltaic module using high and low or no bias conditions reveals shunted cells in the module. For module cell-to-cell performance investigations low bias is sufficient, with high bias the signal of some cells may be misinterpreted as delivering an exaggerated performance. The results demonstrate that forward current bias reveals comparable results to the use of light bias. The advantage of forward current bias with respect to light bias is that the guestion of uniformity influencing the measurement results is much reduced.

Słowa kluczowe

EN

laser scanning; photovoltaic module; bias; photocurrent map

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2000
• Tom: Vol. 8, No. 4
• Strony: 328--332
• Opis fizyczny: Bibliogr. 4 poz.

Twórcy

autor

Roschier S.

autor

Agostinelli G.

autor

Dunlop E. D.

• EC JRC Ispra, 1 Via E. Fermi, I-21020 Ispra (VA), Italy,