Some comments on the band bending and origin of electronic defect states on the clean SnO₂(110) surface

• Autorzy: Lipa D. , Szuber J.
• Konferencja: International Seminar on Semiconductor Gas Sensors : SGS' 98 (1 ; 22-25.09.1998 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

EN

In this paper the reanalysis of the recently published results of our Photoemission Yield Spectroscopy (PYS) studies of the electronic properties of the space charge layer of the clean SnO₂(110) surface with (1x1) atomic structure is presented in order to remove the fundamental contradictions concerning the values of the absolute band bending eVs obtained in our studies and UPS data found in available literature. Basing on the value of the interface Fermi level position as determined by THEMLIN ET AL. by Synchrotron Radiation Photoelectron Spectroscopy (SRPS) studies, a new and corrected value of the absolute band bending eVs was calculated. Moreover, some comments are presented on thr origin of the effective density of the filled electronic states N(E) localized in the band gap below the Fermi level EF.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 1/2
• Strony: 282--285
• Opis fizyczny: Bibliogr. 23 poz.

Twórcy

autor

Lipa D.

autor

Szuber J.

• Departament of Semiconductor Surface Physics, Institute of Physics, Silesian Technical University, ul. Krzywoustego, 2 44-100 Gliwice, Poland