Theoretical study of semiconductor thin films gas sensors: attempt to consistent approach

• Autorzy: Brynzari V. , Korotchenkov G. , Dmitriev S.
• Konferencja: International Seminar on Semiconductor Gas Sensors : SGS' 98 (1 ; 22-25.09.1998 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

EN

The consistent microscopic approach to modelling of gas sensitivity of tin dioxide thin films was developed. The fundamentals of the model is Volkenstein theory of chemisorption. In the frame of given approach the steady-state and transient cases were considered quantitatively, and it were found an explanations both observed operating chracteristics, and their connection with microscopic parameters. during modelling there were considered the balance of molecular and atomic oxygen on SnO₂ surface and its interconnection with surface potential. The film's conductivity for two main geometry of crystallite contacts was calculated. In steady-state case the problem of detection description was reduced to one equation relatively to surface potential. In transient case it was shown that there is quasi-equilibrium in electron-chemisorbed oxygen subsystem, and the kinetic mechanism for surface catalyst doped films was proposed. The last one takes into account the molecular form of oxygen and oxygen spilover from catalyst to metal oxide surface.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 1/2
• Strony: 225--235
• Opis fizyczny: Bibliogr. 23 poz.

Twórcy

autor

Brynzari V.

autor

Korotchenkov G.

autor

Dmitriev S.

• Laboratory of Microelectronics, Technical University of Moldava Bld. Stefan cel Mare, 168, Chisinau, 2004, Moldova,