Gas sensing surface states of porous silicon junctions investigation by deep levels transient spectroscopy

• Autorzy: Płachetko S. , Bała W.
• Konferencja: International Seminar on Semiconductor Gas Sensors : SGS' 98 (1 ; 22-25.09.1998 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

EN

Deep level transient spectroscopy is used to investigate electrically active traps in porous Si layers prepared by electrochemical etching. Obtained data show that there is a large density of surface states which can interact with molecules of ambient gases. We have treated our samples by the exprosure in air and then moving them back to the vacuum conditions. The DLTS spectrum changes and returns to the steady state conditions after few temperature scans. The shape of DLTS spectrum is independent on the time interval between back to the vacuum conditions and first measurements. The thermal emission energy of observed levels was calculated.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 1/2
• Strony: 210--212
• Opis fizyczny: Bibliogr. 13 poz.

Twórcy

autor

Płachetko S.

autor

Bała W.

• Institute of Physics, N. Copernicus University, ul. Grudziądzka 5, 87-100 Toruń, Poland,