Influence of gas adsorption on photoluminescence properties of porous silicon layers

• Autorzy: Łukasiak Z. , Wyrzykowski Z. , Sylwisty J. , Bała W.
• Konferencja: International Seminar on Semiconductor Gas Sensors : SGS' 98 (1 ; 22-25.09.1998 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

EN

Influence of different vapours (methanol CH₃OH, isopropanol C₃H₈O, toluene C₆H₅CH₃) on photoluminescence spectra of anodically etched porous silicon measured at room temperature under pulse exciation are presented. Weak changes of the global photoluminescence intensity, distinct changes of spectrum structure and its full recovery after exposure samples to vacuum are observed. To explain our results we assumed, that adsorbed molecules modify propability of nonradiative recombination of the excited carriers on traps located on the surface of silicon crystallites. Presented results and conclussions support quantum confinement as a mechanism of the luminescence of porous silicon.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 1/2
• Strony: 207--209
• Opis fizyczny: Bibliogr. 9 poz.

Twórcy

autor

Łukasiak Z.

autor

Wyrzykowski Z.

autor

Sylwisty J.

autor

Bała W.

• Institute of Physics, N. Copernicus University, ul. Grudziądzka 5, 87-100 Toruń, Poland