Irradiation assisted preparation of gas sensitive layers based on halogen substituted phthalocyanines

• Autorzy: Pakhomov G. L. , Pakhomov L. G. , Pozdnyaev D. E. , Zakamov V. R. , Spector V. N.
• Konferencja: International Seminar on Semiconductor Gas Sensors : SGS' 98 (1 ; 22-25.09.1998 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

EN

Irradiation assisted preparation using theion beam implantation into gas sensitive thin film layers based on halogen substituted phthalocyanines is described. Conductivity, surface chemistry, surface structure and gas sensing properties were examined. Our experiments showed that ion beam implantation with various of doses and energies leads to serious alterations in the film structure. In spite of this, the film behaves as strongly doped semiconducor sensitive to the gas influence, in the present case to ammonia. Three positions have been improved: absolute sensitivity followed by the increasing of initial conductivity, stability of the background signal, including the decrease of variation among samples, and resistance to the annealing or ageing.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 1/2
• Strony: 136--144
• Opis fizyczny: Bibliogr. 16 poz.

Twórcy

autor

Pakhomov G. L.

autor

Pakhomov L. G.

autor

Pozdnyaev D. E.

autor

Zakamov V. R.

autor

Spector V. N.

• Institute of Biochemical Physics, Russian Academy of Sciences, Moscow, Russia,