The control of defect in the gas-sensitive tin dioxide layers

• Autorzy: Dimitrov D. T. , Lutskaya O. F. , Moshnikov V. A.
• Konferencja: International Seminar on Semiconductor Gas Sensors : SGS' 98 (1 ; 22-25.09.1998 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

EN

In this paper are presented the studies on processes of defect formation in the SnO₂ layers including the following results: the thermodynamic analysis of equilibrium of native point defects permit to solve the contradiction between n-type unipolar conductivity and double-side homogeneous area of SnO₂ phase; construction Po₂-T-x state diagram of tin dioxide; processes contraol of pore formation and their interaction with point defects in SnO₂ layers by putting into the charge volantive dope additives. The intergrated investigations of nano-structure formation processes made a contribution to the development technological methods of gas-sensitivity increase of layers to weak-polar molecules.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 1/2
• Strony: 61--65
• Opis fizyczny: Bibliogr. 12 poz.

Twórcy

autor

Dimitrov D. T.

autor

Lutskaya O. F.

autor

Moshnikov V. A.

• Saint-Petersburg State Electrotechnical Engineering University, Popova str. 5, 197376 St. Petersburg, Russia