Nanocrystalline tin dioxide thin films as oxidizing gas sensor

• Autorzy: De Agapito J. A. , Santos J. P. , Martin M. A. , Vasquez H.
• Konferencja: International Seminar on Semiconductor Gas Sensors : SGS' 98 (1 ; 22-25.09.1998 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

EN

Nanocrystalline tin dioxide has been employed to develop two types of sensor devices. Two electrical properties, resistivity and work function, increase with oxidizing gas adsorption. The first leads to the classical thin film resistive sensor. The other property is used to design a switching diode. Both devices show a ligh sensitivity and linearity under proper design and operating parameters. Typival figures are 100% resistance change and 50 mV voltage shift for 50 ppb of NO₂ in air. A theoretical model is proposed to explain the results.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 1/2
• Strony: 55--60
• Opis fizyczny: Bibliogr. 17 poz.

Twórcy

autor

De Agapito J. A.

autor

Santos J. P.

autor

Martin M. A.

autor

Vasquez H.

• Departament de Electronica, Facultad de Ciencias Fisicas, Universitad Complutense de Madrid, Ciudad Universitaria, 28040 Madrid, Spain,