Determination of optical parameters of the MOS structure for use in photoelectric measurements

• Autorzy: Kudła A. , Brzezińska D. , Kątcki J. , Wagner T.
• Języki publikacji: EN

Abstrakty

EN

A three-layer optical model of the MOS structure: (1) Al₂O₃, (2) A1 with Al₂O₃ or void content, (3) SiO₂ on a Si substrate has been applied earlier in spectroscopic ellipsometry. This model enabled a good fit of the calculated and measured spectral ellipsometric characteristic. However the S i0₂ layer thicknesses and gate layer thicknesses determined by other methods were not always identical with the ones obtained by spectroscopic ellipsometry. Penetration of A1 into SiO₂ was directly confirmed by cross-sectional TEM observations. Applying a more advanced, five-layer model with two intermediate layers (50% Al₂O₃-50%AI and 50% Al-50% SiO₂) for calculations in spectroscopic ellipsometry, made it possible both to determine the thicknesses of individual layers and to confirm the penetration of A1 into SiO₂ in most of the samples. Photoelectric characteristics calculated using the optical parameters of the system determined in this way were compared with the experimental ones. Good agreement of SiO₂ thicknesses used in calculation and obtained from other measurements supports the presented optical model of the Al-SiO₂-Si structure.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 4
• Strony: 390--395
• Opis fizyczny: Bibliogr. 9 poz.

Twórcy

autor

Kudła A.

autor

Brzezińska D.

autor

Kątcki J.

autor

Wagner T.

• Institute of Electron Technology, al. Lotników 32/46, Warszawa, Poland