High-temperature InAs1-xSbx photodiodes employing nonequilibrium effects

• Autorzy: Jóźwikowski K. , Niedziela T.
• Języki publikacji: EN

Abstrakty

EN

We determine operational parameters of high temperature (T = 230 K) InAs1-xSbx photodiodes in which nonequilibrium effects occurring near the p-n and l-h abrupt junctions are employed. It is proved that one can enhance the voltage responsivity o f a photodiode by using a heterostructure, thanks to an increase in the dynamic resistance. It is illustrated that relatively small reverse bias of photodiodes makes a considerable increase in their dynamic resistance and an increase in the quantum efficiency. The calculations are performed for photodiodes for the region o f medium infrared (3 ÷ 5.5 µm).

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 4
• Strony: 378--383
• Opis fizyczny: Bibliogr. 19 poz.

Twórcy

autor

Jóźwikowski K.

autor

Niedziela T.

• Institute of Technical Physics, Military University of Technology, ul. S. Kaliskiego 2, 01-489 Warszawa, Poland