Application of the galvanomagnetic measurements in the temperature range 4 ÷ 300 K to the MBE GaAs layers characterization

• Autorzy: Wolkenberg A. , Przesławski T.
• Języki publikacji: EN

Abstrakty

EN

The galvanometric measurements were performed on the square shaped samples after Van der Pauw and on the Hall bar at low electric fields ca.1.5 V/cm and magnetic induction ca. 6 kG in order to make a comparision between the theoretical and experimental results of the temperature dependence of mobility and resistivity from 4 K to 300 K. It was obtained a calculation method of the drift mobility and Hall mobility in which are applied the scatterings: on ionized impurities, on polar optical phonons, on accoustic phonons (deformation potential), on accoustic phonons (piezoelectric potential) and on dislocations. The elaborated method transformed to a computer program allows to fit experimental values of resistivity and Hall mobility to those calculated. Fitting procedure makes possible to characterize the quality of the n-type GaAs MBE layer, i. e. the net electron concentration, whole ionized impurities concentration and dislocation desity after Read space charge cylinders model. The calculations together with measurements allows to obtain compensation ratio value in the layer also. The influence of the epitaxial layer thickness on layers measurements accuracy in the case of Van der Pauw square probe was investigated. It was stated that in the layers under 3 µm the bulk properties are strongly influenced by both surfaces. The results of measurements of the same layer using Van der Pauw and Hall bar structure were compared.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 4
• Strony: 369--372
• Opis fizyczny: Bibliogr. 14 poz.

Twórcy

autor

Wolkenberg A.

autor

Przesławski T.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland