Comparative analysis and simulation of current relaxation in germanium p⁺ -p -p⁺ structures of different geometrical forms

• Autorzy: Kletski S. , Piotrowski T. , Sikorski S.
• Języki publikacji: EN

Abstrakty

EN

There are presented the mathematical model and some results describing the nonstationary exclusion and accumulation of nonequilibrium carriers of change in germanium p⁺ -p-p⁺ of different geometrical form (parallelepiped, hollow cylinder and sphere). The comparative analysis of transient currents in these structures is provided under the condition of a constant voltage drop over their thickness. Nonstationary distributions of carriers concentration, electric field and current relation in the base of such kind structures are calculated. The dynamics of transient processes is discused.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 4
• Strony: 365--368
• Opis fizyczny: Bibliogr. 3 poz.

Twórcy

autor

Kletski S.

autor

Piotrowski T.

autor

Sikorski S.

• Institute of Semiconductor Physics, 252028 Kiev, Ukraine