Self-heating of the 1-h junction structure in conditions of the accumulation

• Autorzy: Sikorski S. , Piotrowski T.
• Języki publikacji: EN

Abstrakty

EN

Two variants of the stationary equation system of carrier transport are presented. The temperature gradient and thermal conductivity equation are taken into consideration using the results of [3]. The equation system is adjusted to n-n⁺ junction where the accumulation effect takes place. The boundary conditions concerning the hole current, the concentration of carriers, the temperature and its gradient are discussed. One of the two equation systems is used for numerical calculations of physical parameters of an n-n⁺ germanium structure. The results are presented in the from of plots showing the relationships p(x), Jp(x), T(x) and grad T(x). The distribution of desities of such heat sources as those Joule, Peltier, Thomson, as well as SRH and Auger recombination are also presented in the figures. The physical meaning of the obtained results is discussed.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 4
• Strony: 354--360
• Opis fizyczny: Bibliogr. 3 poz.

Twórcy

autor

Sikorski S.

autor

Piotrowski T.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland