TEM study of the formation of defects in AlGaAs/GaAs and InGaAs/GaAs heterostructures

• Autorzy: Kątcki J. , Ratajczak J. , Phillipp F. , Jin-Phillipp N. Y. , Shiojiri M. , Regiński K. , Bugajski M.
• Języki publikacji: EN

Abstrakty

EN

In this paper the formation of lattice defects in AlGaAs/GaAs and InGaAs/GaAs heterostructures is discussed. The heterostructures were grown by various techniques of epitaxy. Transmission electron microscopy (TEM) observations of the heterostructure showed that in AlGaAs/GaAs heterostructures the main reason for the formation of defects are local inhomogeneties but in InGaAs/GaAs heterostructures lattice misfit is responible for this process.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 4
• Strony: 343--347
• Opis fizyczny: Bibliogr. 9 poz.

Twórcy

autor

Kątcki J.

autor

Ratajczak J.

autor

Phillipp F.

autor

Jin-Phillipp N. Y.

autor

Shiojiri M.

autor

Regiński K.

autor

Bugajski M.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland,