The influence of structure and signal parameters on the results of two-level charge pumping measurements

• Autorzy: Łukasiak L. , Nowak B. , Szostak S. , Jakubowski A.
• Języki publikacji: EN

Abstrakty

EN

The influence of MOS transistor parameters, such as substrate doping, gate oxide thickness, and carrier capture cross-sections, on the shape of two-level charge pumping current is investigated. Similar analysis is carried out with respect to signal parameters, e.g. gate signal amplitude, source-to bulk voltage, etc. Theoretical simulation is compared with experimantal data and reasonable agreement is achieved.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 4
• Strony: 295--303
• Opis fizyczny: Bibliogr. 25 poz.

Twórcy

autor

Łukasiak L.

autor

Nowak B.

autor

Szostak S.

autor

Jakubowski A.

• Institute of Microelectronics and Optoelectronics, Warsaw Univesity of Technology, ul. Koszykowa 75, 00-662 Warszawa, Poland