Characteristics of infrared photodiode using SiO₂ insulator on InSb wafer with p-i-n structure

• Autorzy: Cho J. Y. , Kim J. S. , Son S. H. , Lee J. H. , Choi S. Y.
• Języki publikacji: EN

Abstrakty

EN

A highly sensitivite photovoltaic infrared diode was fabricated for detecting a 3-5 µm wavelength range in an InSb wafer with a p-i-n structure grown by MOCVD. The formation of silicon dioxide (SiO₂) insulator films for the junction interface and surface of the photodiode were prepared using remote plasma enhanced chemical vapour deposition (PECVD) as InSb has a low melting point and evaporation temperature for surface atoms. The structural characteristics of SiO₂ films and electrical characteristics of metal-insulator-semiconductor structures were initially examined. The leakage current density at 1 MV/cm was about 22 nA/cm², the breakdown electric field of the MIS capacitor using SiO₂ film deposited at 105°C was about 3.5 MV/cm, and the interface-state density at the mid-band gap extracted from the 1 MHz capacitance-voltage measurement was about 2x10¹¹ cm⁻² eV⁻¹. Thereafter, the characteristics of the infrared photodiode were examined. The product of zero-bias resistance by area (R₀A) showed 1.56 x 10⁶ Ωcm² and normalized detectivity exhibited about 1x10¹¹ cm⁻² W⁻¹.

Słowa kluczowe

EN

InSb photodiodes; InSb MIS structure; SiO2 insulator film; C-V characteristics

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 1999
• Tom: Vol. 7, No. 4
• Strony: 369--374
• Opis fizyczny: Bibliogr. 8 poz.

Twórcy

autor

Cho J. Y.

autor

Kim J. S.

autor

Son S. H.

autor

Lee J. H.

autor

Choi S. Y.

• Department of Electrical Engineering, Kyungpook National University Taegu, 702-701, Korea,