Studies of relationship between deep levels and RoA product in mesa type HgCdTe devices

• Autorzy: Yoshino J. , Morimoto J. , Wada H. , Ajisawa A. , Kawano M. , Oda N.
• Języki publikacji: EN

Abstrakty

EN

The relationships between the figure of merit RoA representing the junction property and deep levels representing electric properties of semiconductors have been studied. RoA can be estimated by current-voltage (I-V) measurements. Deep levels can be estimated using spectral analysis of deep level transient spectroscopy (SADLTS). It has been confirmed that values of activation energies concentrate around 30 meV with the increase of RoA. This suggests that the influence from the inherent deep levels in the HgCdTe device becomes strong due to the increase of RoA, resulting in the improvement of the diode characteristics.

Słowa kluczowe

EN

HgCdTe; DLTS; SADLTS; mesa-type; RoA product; deep level; activation energy

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 1999
• Tom: Vol. 7, No. 4
• Strony: 361--367
• Opis fizyczny: Bibliogr. 14 poz.

Twórcy

autor

Yoshino J.

autor

Morimoto J.

autor

Wada H.

autor

Ajisawa A.

autor

Kawano M.

autor

Oda N.

• Department of Materials Science and Engineering, National Defence Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan,