Numerical simulations for HgCdTe related detectors

• Autorzy: Yoo S. D. , Jo N. H. , Ko B. G. , Chang J. , Park J. G. , Kwack K. D.
• Języki publikacji: EN

Abstrakty

EN

In this paper we introduce a new HgCdTe 2-dimensional numerical simulator, HanYang University Semiconductor Device Simulator (HYSEDES). HYSEDES adopts the modifield transport models to describe the inherent natures of HgCdTe such as the degeneracy, the nonparabolic conduction band, and the band offset at heterointerface. It also takes into account various generation - recombination mechanisms regarding tunnelling phenomena and optical generation. For the advanced devices employing multiple junctions, all the material parameters are described as a function of the position. The simulation results are reported for photovoltaic devices and focal plane array. We also proposed a structure to improve the characteristics in focal plane array, i. e., to reduce crosstalk with slight degrading quantum efficiency.

Słowa kluczowe

EN

HgCdTe; 2D numerical simulator; photovoltaic devices; FPA

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 1999
• Tom: Vol. 7, No. 4
• Strony: 347--356
• Opis fizyczny: Bibliogr. 32 poz.

Twórcy

autor

Yoo S. D.

autor

Jo N. H.

autor

Ko B. G.

autor

Chang J.

autor

Park J. G.

autor

Kwack K. D.

• Advanced Semiconductor Material and Device Development Centre, Hanyang University, Seoul 133-791, Korea