Low-cost 320 x 240 uncooled IRFPA using conventional silicon IC process

• Autorzy: Ishikawa T. , Ueno M. , Endo K. , Nakaki Y. , Hata H. , Sone T. , Kimata M.
• Języki publikacji: EN

Abstrakty

EN

A 320 x 240 uncooled infrared focal plane array (IRFPA) with series PN junction diodes fabricated on a silicon-on-insulator (SOI) wafer has been developed. Resistive bolometers, pyroelectric detectors and thermopile detectors have been reported for large scale uncooled IRFPAs, while the detector developed uses the temperature dependence of forward-biased voltage of the diode. The diode has low 1/f noise because it is fabricated on the monocrystalline SOI film which has few defects. The diode is supported by buried silicon dioxide (BOX) film of the SOI wafer, which becomes a part of a thermal isolated structure by using bulk silicon micromachining technique. The detector constains an absorbing membrane with a high fill factor of 90% to achieve high IR absorption, and the readout circuit of the FPA constains a gate modulation integrator to suppress the noise. Low cost IRFPA can be supplied because the whole structure of the FPA is fabricated on commercial SOI wafers using a conventional silicon IC process.

Słowa kluczowe

EN

uncooled IRFPA; SOI; PN junction diode; forward-biased characteristics; fill factor; silicon compatible process

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 1999
• Tom: Vol. 7, No. 4
• Strony: 297--303
• Opis fizyczny: Bibliogr. 7 poz.

Twórcy

autor

Ishikawa T.

autor

Ueno M.

autor

Endo K.

autor

Nakaki Y.

autor

Hata H.

autor

Sone T.

autor

Kimata M.

• Asvanced Technology R&D Center, Mitsubishi Electric Corporation 4-1, Mizuhara, Itami, Hyogo, 664-8641, Japan,