Optical absorption and luminescence of LiTaO₃:Cr and LiTaO₃:Cr, Nd crystals

• Autorzy: Gołąb S. , Sokólska I. , Dominiak-Dzik G. , Palatnikov M. N. , Sidorov N. V. , Biryukova I. , Kalinnikov V. T. , Ryba-Romanowski W.
• Konferencja: The International Conference on Solid State Crystals '98 (ICSSC '98) ; (12.09-16.09.1998) ; Zakopane, Poland
• Języki publikacji: EN

Abstrakty

EN

The interest in LiNbO₃ and LiTaO₃ crystals doped with transition metal or rare eartch ions is related to their potential applications as self-switching and self-frequency doubling laser materials. In the past considerable attention has been paid to LiNbO₃ crystals doped by variety of luminescent ions. In particular LiNbO₃:Cr was investigated recently by Macfarlane et al. [1]. Energy transfer between Cr³⁺ and Nd³⁺ in LiNbO₃ has been studied and discussed by Vergara et al. [2]. In this work we investigate spectroscopic properties of Cr³⁺ and Cr³⁺ - Nd³⁺ interaction in LiTaO₃ using optical absorption, luminescence and luminescence decay times at temperatures between 5 K and 300 K. Some preliminary data obtained with singly doped LiTaO₃:Cr at low activator concentration are given in our previous work [3]. Recorded spectra indicate that both the Cr³⁺ and Nd³⁺ are located in several non - equivalent sites that differ in the strength of the crystal field. Luminescence spectrum of Cr³⁺ consists of a broad band whose maximum and intensity depend on temperature. Below about 50 K an additional sharp band with four distinct components appears in the spectrum. The broad band attributed to the spin allowed ⁴T₂ - ⁴A₂ transition of Cr³⁺ ions overlaps two absorption bands of Nd³⁺ ions at about 810 nm and 890 nm making the Cr³⁺ - Nd³⁺ energy transfer process feasible. Results of measurements are discussed and compared to those obtained with LiNbO₃:Cr.

Słowa kluczowe

EN

energy transfer; luminescence; non-equivalent sites

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 1999
• Tom: Vol. 7, No. 2
• Strony: 145--147
• Opis fizyczny: Bibliogr. 5 poz.

Twórcy

autor

Gołąb S.

autor

Sokólska I.

autor

Dominiak-Dzik G.

autor

Palatnikov M. N.

autor

Sidorov N. V.

autor

Biryukova I.

autor

Kalinnikov V. T.

autor

Ryba-Romanowski W.

• Institute of Low Temperature and Structure Research PAN, 2 Okólna Str., 50-422 Wrocław, Poland