Photoreflectance study of coupling effects in double quantum wells

• Autorzy: Sęk G. , Ryczko K. , Kubisa M. , Misiewicz J. , Koeth J. , Forchel A.
• Konferencja: The International Conference on Solid State Crystals '98 (ICSSC '98) ; (12.09-16.09.1998) ; Zakopane, Poland
• Języki publikacji: EN

Abstrakty

EN

A double quantum well (DQW) molecular beam epitaxy (MBE) grown GaAs/AlxGa1-xAs structure was studied. To investigate the coupling effects in such a system 1 monolayer (ML) thick AlAs barrier was inserted at the centre of the GaAs/AlxGa1-xAs single well. Due to the strong coupling between wells each confined state splits into two : symmetric and antisymmetric ones. At room temperature photoreflectance (PR) spectrum features related to transitions between all these states were observed. Theoretical considerations based on the envelope function approximation were performed to obtain the energies of expected optical transitions. An excellent agreement between experiment and theory was obtained.

Słowa kluczowe

EN

GaAs/AlxGa1-xAs; double quantum wells; coupling effects; photoreflectance spectroscopy

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 1999
• Tom: Vol. 7, No. 2
• Strony: 117--119
• Opis fizyczny: Bibliogr. 7 poz.

Twórcy

autor

Sęk G.

autor

Ryczko K.

autor

Kubisa M.

autor

Misiewicz J.

autor

Koeth J.

autor

Forchel A.

• Institute of Physics, Wrocław University of Technology, 27 Wybrzeże Wyspiańskiego Str., 50-370 Wrocław, Poland