Reciprocal lattice mapping of InGaAs layers grown on InP (001) and GaAs (001) substrates

• Autorzy: Bąk-Misiuk J. , Kaniewski J. , Domagała J. , Regiński K. , Adamczewska J. , Trela J.
• Konferencja: The International Conference on Solid State Crystals '98 (ICSSC '98) ; (12.09-16.09.1998) ; Zakopane, Poland
• Języki publikacji: EN

Abstrakty

EN

The structure of surfaces of InGaAs(InAs) layers grown on InP(001) and GaAs(001) by molecular beam epitaxy (MBE) was studied by high-resolution X-ray diffractometry. The reciprocal lattice mapping and the rocking cuvre technique were used to determine distribution of misfit dislocations in the layers. Directional dependence of dislocation density in InGaAs strained layers grown at two-dimensional (2D) grownth mode was observed. It was found that anisotropic distribution of dislocations in the InGaAs layers resulted from development via bending in the interface plane of dislocations present in the InP substrate. Simultaneously, homogeneous distribution of dislocations in relaxed InAs layers, grown on InP as well as GaAs substrates, has been detected. At the initial stage these epitaxial layers were grown due to tree-dimensional (3D) island mode. The reriprocal lattice maps confirm that coalescence of islands during the epitaxy generates dislocations that in turn homogeneously distribute in the layer. It seems that the growth mode rather than lattice mismatch determines density of dislocations in InAs epitaxial layers grown on InP and GaAs substrates. However, lattice mismatch influences relaxiation process in lattice-mismatched layers. Transport properties of relaxed InAs layers strongly depend on growth temperature.

Słowa kluczowe

EN

InGaAs; molecular beam epitaxy; X-ray diffraction; diffuse scattering

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 1999
• Tom: Vol. 7, No. 2
• Strony: 107--112
• Opis fizyczny: Bibliogr. 13 poz.

Twórcy

autor

Bąk-Misiuk J.

autor

Kaniewski J.

autor

Domagała J.

autor

Regiński K.

autor

Adamczewska J.

autor

Trela J.

• Institute of Physics, Polish Academy of Sciences, 32/46 Al. Lotników, 02-668 Warsaw, Poland,