Gate-controlled narrow band gap photodiodes passivated with RF sputtered dielectrics

• Autorzy: Rutkowski J. , Wenus J. , Gawron W. , Adamiec K.
• Konferencja: The International Conference on Solid State Crystals '98 (ICSSC '98) ; (12.09-16.09.1998) ; Zakopane, Poland
• Języki publikacji: EN

Abstrakty

EN

Gate-controlled diodes were made by using evaporated indium electrodes overlapping the edge of mesa diodes, isolated from the surface by a layer of ZnS or by native anodic oxide of InSb or HgCdTe. The resulting three-terminal device characteristics with gate voltage as a parameter have been investigated. Relative spectral responses and I-V characteristics were measured at 77 K. The R₀A product is used as an indicator of the dark current of photodiodes passivated with ZnS layer. A plot of R₀A values versus gate potential shows that the optimum R₀A values are obtained at small positive gate bias voltage. This dependence is consistent with surface recombination influencing the R₀A product. The results of a two-dimensional model for calculating gate-induce surface leakage currents due to band-to-band tunnelling are presented. The exact quantitative comparison cannot be made between our results and theory, since the active tunnelling area is not known.

Słowa kluczowe

EN

HgCdTe; photodiodes; passivation; sputtering

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 1999
• Tom: Vol. 7, No. 2
• Strony: 97--101
• Opis fizyczny: Bibliogr. 8 poz.

Twórcy

autor

Rutkowski J.

autor

Wenus J.

autor

Gawron W.

autor

Adamiec K.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland,