Metalorganic vapour phase epitaxy of GaN and lateral overgrowth

• Autorzy: Beaumont B. , Gibart P.
• Konferencja: The International Conference on Solid State Crystals '98 (ICSSC '98) ; (12.09-16.09.1998) ; Zakopane, Poland
• Języki publikacji: EN

Abstrakty

EN

Nitride semiconductor alloys have merged as the most promising materials for short wavelengths light emiting diodes (LEDs) and laser diodes (LDs). The GaInN multiquantum wells (MQW) structure was used as the active part of LDs and has presently proven to work at room temperature in cw mode for 10,000 h. These achievements would not have been possible without the emergence of new approaches in heteroepitaxy of GaN leading to layers exhibiting lower dislocation densities than those grown using conventional heteroepitaxy. Metalorganic vapour phase epitaxy (MOVPE) has demonstrated its ability to fabricate structures for optoelectronics GaN based devices. Several nitrogen sources have been testede, but so far NH3 remains the best nitrogen precursor despite the stringen requirement of high V/III ratio in the vapour phase. With the epitaxial lateral overgrowth (ELOG), high quality GaN layers have been obtained. HVPE or MOVPE can apply either ELOG technology, on sapphire or 6H-SiC substrates. The dislocation densities in the overgrowth region are orders of magnitude lower than in the standard heteroepitaxial GaN layers.

Słowa kluczowe

EN

GaN; lateral overgrowth; MOVPE

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 1999
• Tom: Vol. 7, No. 2
• Strony: 63--74
• Opis fizyczny: Bibliogr. 56 poz.

Twórcy

autor

Beaumont B.

autor

Gibart P.

• Centre de Recherches sur l'HétéroEpitaxie et ses Applications, CRHEA-CNRS Sophia Antipolis, 06560-Valbonne, France