A charge-sheet capacitance model of small-geometry MOSFETs for analog/digital applications

• Autorzy: Ati A. A. , Napieralski A. , Napieralska M. , Ciota Z.
• Konferencja: Mixed Design of Integrated Circuits and Systems. 5 International Conference MIXDES' 98 (18-20.06.1998 ; Łódź, Poland)
• Języki publikacji: EN

Abstrakty

EN

A new simple, analytic and physical based charge-capacitance model valid for small-geometry MOSFETs is presented. The proposed charge-capacitance model is developed from the recently published DC MOSFET model [1], which uses a single current equation to describe the I-V characteristics from subthreshold to strong inversion as well as from linear to saturation region of operation. The resulting charge equations are functions of the surface potentials at the source and drain ends. Different channel-partition methods are used for the development of source and drain charge equations. All capacitance are derived from the charges to ensure charge conversation. The resulting capacitances have non-reciprocal property. The model accounts for the major physical effects in state-of-the art of the small-geometry MOSFET devices. A set of benchmark tests for the model continuity has been performed and the benchmark tests requirements are met by the proposed model. Therefore, the proposed model expected to be very suitable for analog applications.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 3
• Strony: 227--233
• Opis fizyczny: Bibliogr. 12 poz.

Twórcy

autor

Ati A. A.

autor

Napieralski A.

autor

Napieralska M.

autor

Ciota Z.

• Departament of Micoelectronics and Computer Science, Technical University of Łódź, Al. Politechniki 11, 93-590, Łódź, Poland,