Transition layer influence upon the galvanomagnetic propeties of epitaxial GaAs Hall generators

• Autorzy: Dobrinska N. , Mihailova T. , Velchev N.
• Języki publikacji: EN

Abstrakty

EN

The galvanomagnetic parameters of n-type epitaxial films on semi-insulating GaAs substrates doped by Cr and In are stidied, using thin film Hall effect devices called Hall generators. The magnetic current sensitivity is evaluated as a function of thickness of the epitaxial films. The quality of the epitaxial films is estimated by a non-destructive method, using the mobility values at room and liquid nitrogen temperatures and the theoretic curve for comparison. The effect of high temperature annealinf on the galvanomagnetic properties of the epitaxial films is also studied. The influence of transition layer is discused for both types of GaAs substrates, including the linearity of the magneto-electrical characteristics of epitaxial Hall generators.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 177--181
• Opis fizyczny: Bibliogr. 9 poz.

Twórcy

autor

Dobrinska N.

autor

Mihailova T.

autor

Velchev N.

• Institute of Applied Physics, Bulgarian Academy of Sciences, 59 Sankt Petersburg Blvd., 4000 Plovdiv , Bulgaria