Optimization of porous silicon fabrication in application to FIPOS technology

• Autorzy: Półrolnik E. , Domański K. , Beck R. B. , Nossarzewska-Orłowska E.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

The structure of "as-grown" porous silicon layer (PSL) was investigated from the point of view of subsequent epitaxial growth over and oxidation of this layer. The idea of optimization is in-depth profiling morphology of pores during anodization process. By presenting SEM cross-section image and AFM surface image of PSL possibilities and after-efects of PSL morphology changes are demonstrated. The significance of these experimental observations for FIPOS (Full Isolation by Porous Oxidise Silicon) substrate fabrication is briefly discussed.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 166--169
• Opis fizyczny: Bibliogr. 4 poz.

Twórcy

autor

Półrolnik E.

autor

Domański K.

autor

Beck R. B.

autor

Nossarzewska-Orłowska E.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warszawa, Poland