Bonding and etch-back techniques for SOI technology

• Autorzy: Łozinko J. , Panas A. , Budzyński T. , Grabiec P. , Dębski T.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

The purpose of this paper is to show results of investigations on bonding and etch-back technoques (BESOI) for applicatios in the fabrication of Silicon-On-Insulator (SOI). Results obtained for high (≥ 1000°C) temperature silicon wafer-to-wafer bond process, where silicon dioxide is used as an intermediate layer, will be presented. Method for thinning of the bonded wafer was performed by preferential etch technoque using p⁺ etch-stop layer.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 162--165
• Opis fizyczny: Bibliogr. 9 poz.

Twórcy

autor

Łozinko J.

autor

Panas A.

autor

Budzyński T.

autor

Grabiec P.

autor

Dębski T.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland