Measurement of surface potential distribution in porous silicon

• Autorzy: Łozowski T. , Sakalauskas S. , Puras R. , Jakubowski A. , Beck R. B.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

Measuring instrument of the surface electric potential and its distribution is presented. The schematic instrument diagram is discussed. The distribution surface electric potential of monocrystalline and porous silicon was investigated by the instrument. The homogeneity of specimens and the value of band bending p-and n-type silicon was evaluated.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 158--161
• Opis fizyczny: Bibliogr. 6 poz.

Twórcy

autor

Łozowski T.

autor

Sakalauskas S.

autor

Puras R.

autor

Jakubowski A.

autor

Beck R. B.

• Departament of Physics, Vilnius University, Sauletekio al. 9, 2040, Vilnius, Lithuania