Investigation of electrical immunity in monocrytalline and porous silicon oxide layers

• Autorzy: Łozowski T. , Montrimas E. , Rinkunas R. , Beck R. B. , Jakubowski A.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

Very little is known so far on the electrochemical propeties of the oxides formed by oxidation of the porous silicon. In the course of this work the comparative study of electrical immunity in monocrystalline and porous oxides was made. The techniques used for this study were contacless methods allowing to analyse the defects formed in the oxides, thier density and morphology. The obtained results prove that the defects in porous oxides differ in size and unlike in monocrystalline oxide, appear in localized spots.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 154--157
• Opis fizyczny: Bibliogr. 4 poz.

Twórcy

autor

Łozowski T.

autor

Montrimas E.

autor

Rinkunas R.

autor

Beck R. B.

autor

Jakubowski A.

• Departament of Physics, Vilnius University, Sauletekio al. 9, Vilnius, Lithuania