Comprasion of different substrates for a fully depleted SOI-CMOS-technology

• Autorzy: Huttner T. , Wurzer H. , Mahnkopf R. , Pindl S. , Abstreiter G.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

Fully depleted SOI technologies require high quality substrates. In this work the properties of one full dose SIMOX and teo different BESOI substrates were compared. Body thickness variation and theshold voltage variation, defect density, parasitic bipolar action and hot carie reliability wee evaluated using n MOS and pMOS transistors and MOS capacitors. Overall UNIBOND wafers are best suited as substrates for a fully depleted SOI CMOS technology.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 151--153
• Opis fizyczny: Bibliogr. 7 poz.

Twórcy

autor

Huttner T.

autor

Wurzer H.

autor

Mahnkopf R.

autor

Pindl S.

autor

Abstreiter G.

• Siement AG, Semiconductor Division, Dept. HL PI M, Otto-Hahn-Ring 6, D-81730 Munchen, Germany