Electrical and piezoresistive characterization of laser-recrystallized polysilicon layers in SOI srtuctures

• Autorzy: Druzhinin A. , Lavitska E. , Maryamova I. , Pankevich I. , Pankov Y.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

Results of theoretical and experimental investigations carried out in order reval possibilities of the microzone laser recrystallization in the technology of piezoresistive mechanical sensors are presented. An expediency criterion of the laser recrystallization in sensor technology has been defined taking into consideration rise of the gauge factor as well as temperature-depended characterization of SOI layers.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 146--150
• Opis fizyczny: Bibliogr. 11 poz.

Twórcy

autor

Druzhinin A.

autor

Lavitska E.

autor

Maryamova I.

autor

Pankevich I.

autor

Pankov Y.

• State University "Lviv Polytechnica", Kotlarevsky Str. 1, Lviv 290013, Ukraine