Digital CMOS array based on SOI structures

• Autorzy: Druzhinin A. , Kogut I.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

The special features in design and technology of a CMOS array on the basis of SOI structures as well as its main electrical characterization are considered. CMOS array have been fabricated by the method of scanning laser recrystallization of polysilicon layers. To use optimally the advantages of SOI structures and estimate experimantally thier abilities the array with a regular pattern has been chosen among the variety of IC.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 142--145
• Opis fizyczny: Bibliogr. 6 poz.

Twórcy

autor

Druzhinin A.

autor

Kogut I.

• Stata University "Lviv Polytechnica", Kotlarevsky Str. 1, Lviv 290013, Ukraine