A small-signal non-quasi-static model of PD SOI MOSFETs

• Autorzy: Tomaszewski D. , Jakubowski A. , Gibki J.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

This work presents a non-quasi-static small-signal of non-fully-depleted SOI MOSFET. It results from the explicit solution of a set of the Poisson and continuity in the appropriate areas of the device, Which has been obtained using so-called S³A approach. Our model is controlled by the same parameters, as the corresponding DC model. It accounts for the main phenomena in the device structure. It allows calculation of the full admittance matrix. The selected C-V characteristics of our model have been presented and compared with the data of the real device. The agreement is quite good. However a local misfit between the theoretical and experimental data requires further improvement of the model for the subthreshold and inversion bias conditions.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 104--109
• Opis fizyczny: Bibliogr. 10 poz.

Twórcy

autor

Tomaszewski D.

autor

Jakubowski A.

autor

Gibki J.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland