A model of I-V characteristcs of partially-depleted SOI MOSFETs

• Autorzy: Tomaszewski D. , Jakubowski A. , Gibki J.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

This work presents a static model of a non-fully-depleted SOI MOSFET. It results from the explicit solutions of sets of the Poisson and continuity equations in the appropriate areas of the device, which have been obtained using S³ A approach. Our model accounts for the main phenomena in the device structure. The selected I-V characteristics of our model have been presented and compared with the data of the real device. The agreement is quite good. However a local misfit between the theoretical and experimental data requires further improvement of the model in the subthreshold and saturation bias conditions.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 96--103
• Opis fizyczny: Bibliogr. 10 poz.

Twórcy

autor

Tomaszewski D.

autor

Jakubowski A.

autor

Gibki J.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland