An effect of PD SOI MOSFET parameters variations on its electrical characteristics

• Autorzy: Tomaszewski D. , Jakubowski A. , Dębski T.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

This work pesents an effect of variations of several and electrical parameters for the DC I-V characteristics of the partially-depleted SOI MOSFETs. The calculations have been done using the physical model of the PD SOI MOSFETs. The calculations show that model characteristics are sensitive to variations of the minority carriers recombination lifetime in the Si film, generation lifetime in the junctions space-charge areas and the film thickness.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 91--95
• Opis fizyczny: Bibliogr. 5 poz.

Twórcy

autor

Tomaszewski D.

autor

Jakubowski A.

autor

Dębski T.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland