The diagnostics of SOI photosensor characteristics

• Autorzy: Druzhinin A. , Lytvyn I. , Tychansky M.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

In creation of functional photosensors produced by the laser recrystallization of thin film poly-Si on insulator the development of physical models plays an important role. These models allow to combine parameters of technological operations, physical properties of source materials with the photo-electric characteristics of photosensors. At the first stage of solution of this problem it is necessary to receive the information on the most number of physical properties in a local site of the integrated photosensors and thier spatial change directly on the photosensors or on test elements. These data provide the parameters of the studies structures, define thier functionality and from the data series for understanding and correct interpretation of the technology of integrated photosensing structures.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 88--90
• Opis fizyczny: Bibliogr. 3 poz.

Twórcy

autor

Druzhinin A.

autor

Lytvyn I.

autor

Tychansky M.

• State University "Lviv Polytechnica", Kotlarevsky Str. 1, Lviv 290013, Ukraine