Electrical characterization methods of SOI structures

• Autorzy: Beck R. B. , Ikraiam F. , Gibki J. , Łukasiak L. , Zaręba A. , Jakubowski A.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

This paper aims in addressing some of the issues related with the electrical characterization methods of SOI strucures. The electrical characterization methods are so far less developed than other techniques although they should offer better sensitivity and far more complex view of the properties of the SOI strucuters. The electrical characterization has proved its valuability in case of MOS structures. The complexity of the SOI structure is causing, however, certain prolems with analysis of the electrical characteristics. The purpose of this work is to comment on the pros and cons of particular characterization methods.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 63--71
• Opis fizyczny: Bibliogr. 17 poz.

Twórcy

autor

Beck R. B.

autor

Ikraiam F.

autor

Gibki J.

autor

Łukasiak L.

autor

Zaręba A.

autor

Jakubowski A.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warszawa, Poland