Performance and physical mechanisms in deep submicron SOI MOSFETs

• Autorzy: Balestra F.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

The main electrical properties of advanced Silicon-On Insulator MOSFETs are addressed. The subthreshold and high field operations are analysed as a function of device architecture. The special SOI parastic phenomena, such as the floating body potential and temperature, are critically reviewed. The main limitation of submicron MOSFET are comparatively evaluated for various SOI strucures. Shot channel and hot carrier effects as well as the reliability of the SOI technology are investigated for gate lenght down to sub -0.1um.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 50--62
• Opis fizyczny: Bibliogr. 40 poz.

Twórcy

autor

Balestra F.

• Laboratoire de Physique des Composiants a Semiconducteurs (UMR CNRS/INPG) ENSERG, 23 Av. des Martyrs, BP 257, 30016 Grenoble, France