SOI technology for sub-0.25 µm CMOS

• Autorzy: Maszara W. P.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

An extensive effort has been undertaken to benchmark the quality of the 200 mm SOI substrates, involving all viable sources of the material in the world. A comprehensive overview of the state of the art of all pertinent parameters of this material is given. The quality of the recent material appears very competitive with the bulk material. In particular, the level of defects in the SOI film is comparable to bulk, below 0.1 cm⁻² for the best material. SOI wafer processing will require only minor equipment and process adjustments. The main challenges for the SOI material today is a sustainable consistency of its parameters, the price and volume availability.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 16--20
• Opis fizyczny: Bibliogr. 15 poz.

Twórcy

autor

Maszara W. P.

• SEMATECH, Austin and AMD, Sunnyvale CA 94088, USA,