Unveiling the Pseudo-MOSFET secrets

• Autorzy: Cristoloveanu S. , Munteanu D.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

The Pseudo-MOS transistor (Ψ-MOSFET ) is a very useful technique for the quick and complete evaluation of the electrical properties of SOI wafers, before any CMOS processing. This paper reviews the state-of-the-art of static and dynamic Ψ-MOSFET operation, highlighting the main models and methods for parameter extraction. Numerical simulations are presented which validate the Ψ-MOSFET principles and clarify the optimal conditions of poeration. Finally, selected examples of applications are given to illustrate the efficiency of this technique for in situ electrical characterization of various SOI technologies and processes.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 7--15
• Opis fizyczny: Bibliogr. 18 poz.

Twórcy

autor

Cristoloveanu S.

autor

Munteanu D.

• Laboratoire de Physique des Composants a Semiconducteurs (UMR CNRS & INPG) ENSERG, B.P. 257, 38016 Grenoble Cedex 1, France