Apparatus for the measurement of critical temperature in metallic quantum wells

• Autorzy: Orłowski M. , Paprocki K. , Korczak Z. , Jałochowski M.
• Konferencja: Seminar on Surface and Thin Film Structures (5 ; 23-26.09.1997 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

EN

The apper describes construction of UHV apparatus and the method of critical temperature measurement of thin Pb layers. Electronic setup for specific resistivity measurement Pb layers during thier deposition on Si(111) substrate is presented. The results obtained during specific resistivity measurements of Pb layers at temperatures above Tc illustrates the accuracy of proposed measuremement method.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 1998
• Tom: Vol. 31, No. 3/4
• Strony: 516--519
• Opis fizyczny: Bibliogr. 11 poz.

Twórcy

autor

Orłowski M.

autor

Paprocki K.

autor

Korczak Z.

autor

Jałochowski M.

• Departament of Experimental of Physics, Institute of Physics, Maria Curie-Skłodowska University, Pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland